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參數(shù)資料
| 型號： | FPD3000P100 |
| 英文描述： | 2W PACKAGED POWER PHEMT |
| 中文描述： | 2W的包裝的功率PHEMT器件 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 182K |
| 代理商： | FPD3000P100 |
FPD3000P100
2W
P
ACKAGED
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Released:
6/27/05
Email:
sales@filcsi.com
RECOMMENDED BIAS CONDITIONS:
Drain-Source Voltage:
5V to 8V
Drain-Source Current:
33% to 50% I
DSS
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
2
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Comp.
Test Conditions
-3V < V
GS
< +0V
0V < V
DS
< +8V
For V
DS
> 2V
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Min
-40
Max
9
-3
I
DSS
25
600
175
150
5.3
Units
V
V
mA
mA
mW
oC
oC
W
Gain Compression
Simultaneous Combination of Limits
3
1
T
Ambient
= 22
°
C unless otherwise noted
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Under any bias conditions
5
dB
2 or more Max. Limits
80
%
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 22
°
C:
P
TOT
= 5.3W – (0.042W/
°
C) x T
HS
where T
HS
= heatsink or ambient temperature above 22
°
C
Example: For a 85
°
C heatsink temperature: P
TOT
= 5.3W – (0.042 x (85 – 22)) = 2.65
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 0 (< 250V) per JESD22-A114-B, Human Body
Model, and Class A (< 200V) per JESD22-A115-A, Machine Model.
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