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參數(shù)資料
| 型號： | FPD1050 |
| 英文描述： | 0.75W POWER PHEMT |
| 中文描述： | 0.75W功率PHEMT器件 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 176K |
| 代理商： | FPD1050 |
FPD1050
0.75W
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filcs.com
Revised:
8/05/04
Email:
sales@filcsi.com
ABSOLUTE MAXIMUM RATINGS*
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Comp.
Test Conditions
-3V < V
GS
< +0V
0V < V
DS
< +8V
For V
DS
> 2V
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Min
-40
Max
10
-3
I
DSS
10
175
175
150
3.4
Units
V
V
mA
mA
mW
oC
oC
W
Gain Compression
Under any bias conditions
5
dB
Simultaneous Combination of Limits**
2 or more Max. Limits
80
%
*
T
Ambient
= 22
°
C unless otherwise noted
**Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 22
°
C:
P
TOT
= 3.4W – (0.022W/
°
C) x T
HS
where T
HS
= heatsink or ambient temperature above 22
°
C
Example: For a 85
°
C heatsink temperature: P
TOT
= 3.4W – (0.022 x (85 – 22)) = 2.01W
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
ASSEMBLY INSTRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage
temperature should be 280-290
°
C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm)
gold wire. Stage temperature should be 250-260
°
C.
APPLICATIONS NOTES & DESIGN DATA
Complete design data, including S-parameters, noise data, and large-signal models are available on
the Filtronic web site.
All information and specifications are subject to change without notice.
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相關(guān)代理商/技術(shù)參數(shù) |
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| FPD1050_1 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:0.75W POWER PHEMT |
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| FPD1050-000SQ | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:0.75W POWER pHEMT |
| FPD1050SOT89 | 制造商:FILTRONIC 制造商全稱:FILTRONIC 功能描述:LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
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