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參數(shù)資料
| 型號(hào)： | FMBA56 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP Multi-Chip General Purpose Amplifier |
| 中文描述： | 500 mA, 80 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | FMBA56 |
F
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 73.
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
80
80
4.0
500
V
V
V
mA
°
C
-55 to +150
Discrete POWE R & Signal
Technologies
1998 Fairchild Semiconductor Corporation
FMBA56
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
Thermal Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FMBA56
700
5.6
180
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
R
θ
JA
SuperSOT
-6
Mark: .2G
C1
E1
C2
B1
E2
B2
pin #1
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