參數(shù)資料
型號(hào)： FMBS5401
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： PNP General Purpose Amplifier
中文描述： 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： SUPERSOT-6, 6 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 95K
代理商： FMBS5401
2004 Fairchild Semiconductor Corporation
Rev. A, Octorber 2004
F
E
C1
NC
C
C
B
SuperSOT
TM
-6 single
Mark: .4S1
pin #1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
a
=25
°
C unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage *
BV
CBO
Collector-Base Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Parameter
Value
-150
-160
-5.0
-600
-55 ~ 150
Units
V
V
V
mA
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= -1.0mA, I
B
= 0
I
C
= -100
μ
A, I
E
= 0
I
E
= -10
μ
A, I
C
= 0
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
a
= 100
°
C
V
EB
= -3.0V, I
C
=0
-150
-160
-5.0
V
V
V
nA
μ
A
nA
-50
-50
-50
I
EBO
On Characteristics *
h
FE
Emitter Cutoff Current
DC Current Gain
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
50
60
50
240
V
CE
(sat)
Collector-Emitter Saturation Voltage
-0.2
-0.5
-1.0
-1.0
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
Small Signal Characterics
f
T
Current Gain Bandwidth Product
I
C
= -10mA, V
CE
= -10V,
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= -250
μ
A, V
CE
= -5.0V, R
S
= 1.0K
f = 10Hz to 15.7KHz
100
300
MHz
C
ob
N
F
Output Capacitance
Noise Figure
6.0
8.0
pF
dB
FMBS5401
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch for
applications requiring high voltage.
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參數(shù)描述
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FMBS549_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Low Saturation Transistor
FMBS549_Q 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FMBS5551 功能描述:兩極晶體管 - BJT Amplifier PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FMBSA06 功能描述:兩極晶體管 - BJT Amplifier PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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