參數(shù)資料
型號(hào)： FMBS5551
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： NPN General Purpose Amplifier
中文描述： 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： SUPERSOT-6, 6 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 90K
代理商： FMBS5551
2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
F
E
C1
NC
C
C
B
SuperSOT
TM
-6 single
Mark: .3S1
pin #1
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Sustaining Voltage *
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Parameter
Value
160
180
6.0
600
- 55 ~ 150
Units
V
V
V
mA
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= 1.0mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
a
= 100
°
C
V
EB
= 4.0V, I
C
= 0
160
180
6.0
V
V
V
nA
μ
A
nA
50
50
50
I
EBO
On Characteristics
h
FE
Emitter Cut-off Current
DC Current Gain
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
80
80
30
250
V
CE(sat)
Collector-Emitter Saturation Voltage
0.15
0.2
1.0
1.0
V
V
BE(sat)
Base-Emitter Saturation Voltage
V
Small Signal Characteristics
f
T
C
obo
C
ibo
h
fe
N
F
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Small Single Current Gain
Noise Figure
I
C
= 10mA, V
CE
= 10, f = 100MHz
V
CE
= 10V, I
C
= 0, f = 1.0MHz
V
BE
= 0.5V, I
C
= 0, f = 1.0MHz
I
C
= 1.0mA, V
CE
= 10V, f = 1.0KHz
I
C
= 250
μ
A, V
CE
= 5.0V,
R
S
= 1.0K
, f = 10 Hz to 15.7KHz
100
300
6.0
20
250
8.0
MHz
pF
pF
50
dB
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
FMBS5551
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