參數(shù)資料
型號: FMBA06
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: NPN Multi-Chip General Purpose Amplifier
中文描述: 500 mA, 80 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-6
文件頁數(shù): 1/4頁
文件大小: 53K
代理商: FMBA06
F
NPN Multi-Chip General Purpose Amplifier
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
80
80
4.0
500
V
V
V
mA
°
C
-55 to +150
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 33.
Discrete POWE R & Signal
Technologies
1998 Fairchild Semiconductor Corporation
Thermal Characteristics
T
A
= 25°C unless otherwise noted
FMBA06
Symbol
Characteristic
Max
Units
FMBA06
700
5.6
180
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
R
θ
JA
SuperSOT
-6
Mark: .1G
C1
E1
C2
B1
E2
B2
pin #1
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