- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375782 > FDS6675 (FAIRCHILD SEMICONDUCTOR CORP) Single P-Channel, Logic Level, PowerTrenchTM MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDS6675 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 115K |
| 代理商： | FDS6675 |
Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Conditions
Min
Typ
Max
Units
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-30
V
Breakdown Voltage Temp. Coefficient
-22
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
/
T
J
R
DS(ON)
Static Drain-Source On-Resistance
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
DS
= V
GS
, I
D
= -250 μA
I
D
= 250 μA, Referenced to 25
o
C
-1
-1.7
-3
V
Gate Threshold Voltage Temp. Coefficient
4.3
mV/
o
C
V
GS
= -10 V, I
D
= -11 A
0.011
0.014
T
J
=125°C
0.016
0.023
V
GS
= -4.5 V, I
D
= -9 A
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -11 A
0.015
0.02
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
t
r
Turn - On Rise Time
On-State Drain Current
-50
A
Forward Transconductance
32
S
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
3000
pF
870
pF
360
pF
V
DS
= -15 V, I
D
= -1 A
V
GEN
= -10 V, R
GEN
= 6
12
22
ns
16
27
ns
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
Turn - Off Delay Time
50
80
ns
Turn - Off Fall Time
100
140
ns
Total Gate Charge
V
DS
= -15 V, I
D
= -11 A,
V
GS
= -5 V
30
42
nC
Gate-Source Charge
9
nC
Gate-Drain Charge
11
nC
-2.1
A
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
-0.72
-1.2
V
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDS6675 Rev.C1
c. 125
O
C/W on a 0.006 in
2
pad
of 2oz copper.
b. 105
O
C/W on a 0.04 in
2
pad of 2oz copper.
a. 50
O
C/W on a 1 in
2
pad
of 2oz copper.
相關PDF資料 |
PDF描述 |
|---|---|
| FDS6676AS | 30V N-Channel PowerTrench SyncFET |
| FDS6676 | 30V N-Channel PowerTrench MOSFET |
| FDS6676S | 30V N-Channel PowerTrench? SyncFET |
| FDS6678A | 30V N-Channel PowerTrench MOSFET |
| FDS6679Z | 30 Volt P-Channel PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6675 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| FDS6675_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDS6675A | 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6675BZ | 功能描述:MOSFET -30V P-Channel PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6675BZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench㈢ MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。