參數(shù)資料
型號(hào)： FDS6676
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 14500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 542K
代理商： FDS6676
2005 Fairchild Semiconductor Corporation
FDS6676AS Rev. A (X)
1
www.fairchildsemi.com
April 2005
F
FDS6676AS
30V N-Channel PowerTrench
SyncFET
Features
■
14.5 A, 30 V. R
DS(ON)
DS(ON)
max= 6.0 m
max= 7.25 m
@ V
@ V
GS
GS
= 10 V
= 4.5 V
R
■
Includes SyncFET Schottky body diode
Low gate charge (45nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
■
■
■
Applications
■
DC/DC converter
Low side notebook
■
General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low R
DS(ON)
FDS6676AS includes an integrated Schottky diode using Fair-
child’s monolithic SyncFET technology.
and low gate charge. The
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Drain Current
– Continuous
(Note 1a)
14.5
A
– Pulsed
50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6676AS
FDS6676AS
13’’
12mm
2500 units
FDS6676AS
FDS6676AS_NL
(Note 3)
13’’
12mm
2500 units
S
D
S
S
SO-8
D
D
D
G
5
6
7
8
4
3
2
1
相關(guān)PDF資料
PDF描述
FDS6676S 30V N-Channel PowerTrench? SyncFET
FDS6678A 30V N-Channel PowerTrench MOSFET
FDS6679Z 30 Volt P-Channel PowerTrench MOSFET
FDS6679 30 Volt P-Channel PowerTrench MOSFET
FDS6680AS 30V N-Channel PowerTrench SyncFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6676 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDS6676AS 功能描述:MOSFET 30V NCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6676AS_0511 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET
FDS6676AS_08 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩
FDS6676AS_G 制造商:Fairchild 功能描述:30V N-Channel PowerTrench SyncFET
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