參數(shù)資料
型號: FDS6676
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 14500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 6/8頁
文件大小: 542K
代理商: FDS6676
6
www.fairchildsemi.com
FDS6676AS Rev. A (X)
F
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6676AS.
Figure 12. FDS6676AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recov-
ery characteristics of the body diode of an equivalent size MOS-
FET produced without SyncFET (FDS6676).
Figure 13. Non-SyncFET (FDS6676) body diode
reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
0
10nS/DIV
0
10nS/DIV
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T = 125
°
T
A
= 25
°
T
A
= 100
°
C
C
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6676 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDS6676AS 功能描述:MOSFET 30V NCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6676AS_0511 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET
FDS6676AS_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩
FDS6676AS_G 制造商:Fairchild 功能描述:30V N-Channel PowerTrench SyncFET