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參數(shù)資料
| 型號： | FDS6630 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | N溝道MOSFET的邏輯電平PowerTrenchTM |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 197K |
| 代理商： | FDS6630 |
F
FDS6630A Rev. C1
Typical Characteristics
(continued)
0.1
0.2
0.5
1
2
5
10
30
50
100
200
500
1000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0 V
C ss
C ss
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0
2
4
6
8
10
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 6.5A
V = 5V
10V
15V
0.1
0.3
1
3
10
30
50
0.01
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
I
D
RDS(ON LIMIT
V = 10V
SINGLE PULSE
R =125°C/W
T = 25°C
DC
1s
10s
10ms
100ms
1ms
100us
0.0001
0.001
001
0.1
t , TI ME (s e c)
1
10
100
300
0.001
0.002
0.005
001
002
005
0.1
0.2
0.5
1
T
r
S n g l e P ul s e
D = 05
01
0.05
0.02
001
02
D u t y C y c l e, D = t /t
1
2
R (t) = r(t) * R
R = 125°C/ W
T - T = P * R JA
P(pk)
t
1
t
2
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6630A | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6644 | 30V N-Channel PowerTrench MOSFET |
| FDS6670AS | 30V N-Channel PowerTrench SyncFET |
| FDS6670AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDS6670A | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6630A | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6630A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6644 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS66630A | 制造商:Fairchild 功能描述:30V, SINGLE, SO-8 |
| FDS6670A | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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