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參數(shù)資料
| 型號(hào)： | FDS6630 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | N溝道MOSFET的邏輯電平PowerTrenchTM |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 197K |
| 代理商： | FDS6630 |
F
FDS6630A Rev. C1
FDS6630A
N-Channel Logic Level PowerTrench
TM
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
April 1999
Features
6.5 A, 30 V. R
DS(on)
= 0.038
@ V
GS
= 10 V
R
DS(on)
= 0.053
@ V
GS
= 4.5 V
Low gate charge (5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
30
±
20
6.5
40
2.5
1.2
1
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
FDS6630A
Device
FDS6630A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
S
D
S
S
SO-8
D
D
D
G
pin
1
6
7
8
5
3
2
1
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6630A | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6644 | 30V N-Channel PowerTrench MOSFET |
| FDS6670AS | 30V N-Channel PowerTrench SyncFET |
| FDS6670AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDS6670A | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6630A | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6630A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6644 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS66630A | 制造商:Fairchild 功能描述:30V, SINGLE, SO-8 |
| FDS6670A | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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