參數(shù)資料
型號(hào): FDS6670A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Single N-Channel, Logic Level, PowerTrenchTM MOSFET
中文描述: 13000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, SO-8
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 242K
代理商: FDS6670A
July 1998
FDS6670A
Single N-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
Features
13 A, 30 V. R
= 0.008
@ V
GS
= 10 V
R
DS(ON)
= 0.010
@ V
GS
= 4.5 V.
Fast switching speed.
Low gate charge (35 nC tyical).
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDS6670A
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
13
A
- Pulsed
50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
FDS6670A Rev.D1
High performance trench technology for
extremely low R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
1
6
7
8
2
4
3
5
1998 Fairchild Semiconductor Corporation
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