- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375782 > FDS6673AZ (FAIRCHILD SEMICONDUCTOR CORP) 30 Volt P-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FDS6673AZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 14500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | FDS6673AZ |
2005 Fairchild Semiconductor Corporation
FDS6673AZ Rev. C(W)
1
www.fairchildsemi.com
April 2005
F
FDS6673AZ
30 Volt P-Channel PowerTrench
MOSFET
Features
■
–14.5 A, –30 V.
R
R
DS(ON)
DS(ON)
= 7.2 m
= 11 m
@ V
@ V
GS
GS
= –10 V
= – 4.5 V
■
Extended V
ESD protection diode (note 3)
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
GSS
range (–25V) for battery applications
■
■
■
General Description
This P-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers, and
battery chargers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
cations.
DS(ON)
specifi-
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall efficiency.
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
–30
V
V
GSS
Gate-Source Voltage
+25
V
I
D
Drain Current
– Continuous
(Note 1a)
–14.5
A
– Pulsed
–50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1.0
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +175
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6673AZ
FDS6673AZ
13’’
12mm
2500 units
S
D
S
S
SO-8
D
D
D
G
5
6
7
8
4
3
2
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6675A | 30V P-Channel PowerTrench MOSFET |
| FDS6675 | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDS6676AS | 30V N-Channel PowerTrench SyncFET |
| FDS6676 | 30V N-Channel PowerTrench MOSFET |
| FDS6676S | 30V N-Channel PowerTrench? SyncFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6673BZ | 功能描述:MOSFET -30V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6673BZ | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -30V 14.5mA 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -30V, 14.5mA |
| FDS6673BZ_F085 | 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6673BZ_G | 制造商:Fairchild 功能描述:-30V P-Channel PowerTrench? MOSFET |
| FDS6675 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。