參數(shù)資料
型號(hào): FDS6630
廠商: Fairchild Semiconductor Corporation
英文描述: N-Channel Logic Level PowerTrenchTM MOSFET
中文描述: N溝道MOSFET的邏輯電平PowerTrenchTM
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 197K
代理商: FDS6630
F
FDS6630A Rev. C1
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0
1
2
3
4
5
0
5
10
15
20
25
30
35
40
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V =10V
3.5V
3.0V
2.5V
6.0V
4.5V
4.0V
5.0V
0
10
20
30
40
0.8
1
1.2
1.4
1.6
1.8
2
2.2
I , DRAIN CURRENT (A)
D
V = 3.5V
7.0V
6.0V
4.5V
10V
4.0V
R
D
5.0V
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
D
V = 10 V
I = 6.5 A
R
D
2
4
6
8
10
0
0.02
0.04
0.06
0.08
0.1
0.12
V , GATE TO SOURCE VOLTAGE (V)
R
D
T = 25°C
I = 3.3 A
D
T = 125°C
1
2
3
4
5
6
0
5
10
15
20
25
30
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 5V
T = -55°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
40
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
A
25°C
-55°C
V = 0V
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
相關(guān)PDF資料
PDF描述
FDS6630A N-Channel Logic Level PowerTrenchTM MOSFET
FDS6644 30V N-Channel PowerTrench MOSFET
FDS6670AS 30V N-Channel PowerTrench SyncFET
FDS6670AS_NL 30V N-Channel PowerTrench SyncFET
FDS6670A Single N-Channel, Logic Level, PowerTrenchTM MOSFET
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參數(shù)描述
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FDS6630A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
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FDS66630A 制造商:Fairchild 功能描述:30V, SINGLE, SO-8
FDS6670A 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube