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參數(shù)資料
| 型號(hào)： | FDS6575 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 247K |
| 代理商： | FDS6575 |
FDS6575 Rev.C1
Typical Electrical Characteristics
(continued)
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0
12
24
36
48
60
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-
G
I = -10A
D
V = -5V
-10V
-15V
0.1
0.2
0.5
1
2
5
10
20
200
400
1000
2000
4000
8000
- V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0 V
C ss
C ss
0.05
0.1
0.3
1
3
10
30
50
0.01
0.1
0.5
2
10
50
200
- V , DRAIN-SOURCE VOLTAGE (V)
-
RDS(ON)LMIT
D
DC
1s
100ms
10ms
1ms
100us
V =-4.5V
SINGLE PULSE
R =125°C/W
T = 25°C
JA
0
0.01
0.1
1
10
100
300
10
20
30
40
50
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =125°C/W
T = 25°C
JA
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 125°C/W
T - T = P * R JA
P(pk)
t
1
t
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6576 | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDS6609A | P-Channel Logic Level PowerTrench MOSFET |
| FDS6614A | N-Channel Logic Level PowerTrench MOSFET |
| FDS6630 | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6630A | N-Channel Logic Level PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6575 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETP SO-8 ((NW)) |
| FDS6575 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| FDS6575_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench?MOSFET |
| FDS6575A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS6576 | 功能描述:MOSFET SO-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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