參數(shù)資料
型號: FDS6576
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: P-Channel 2.5V Specified PowerTrenchTM MOSFET
中文描述: 11000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 1/8頁
文件大小: 607K
代理商: FDS6576
F
FDS6576 Rev. B
FDS6576
P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is in a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
Applications
Load switch
Battery protection
Power management
November 1999
PRELIMINARY
Features
-11 A, -20 V. R
DS(ON)
= 0.014
@ V
GS
= -4.5 V
R
DS(ON)
= 0.020
@ V
GS
= -2.5 V
Extended V
GSS
range (
±
12V) for battery applications.
Low gate charge (44nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
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