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參數(shù)資料
| 型號： | FDS6575 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 247K |
| 代理商： | FDS6575 |
Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Conditions
Min
Typ
Max
Units
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-20
V
Breakdown Voltage Temp. Coefficient
-19
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
/
T
J
R
DS(ON)
Static Drain-Source On-Resistance
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
DS
= V
GS
, I
D
= -250 μA
I
D
= 250 μA, Referenced to 25
o
C
-0.4
-0.8
-1.5
V
Gate Threshold Voltage Temp. Coefficient
3
mV/
o
C
V
GS
= -4.5 V, I
D
= -10 A
0.01
0.013
T
J
=125°C
0.015
0.02
V
GS
= -2.5 V, I
D
= -9 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -4.5 V, I
D
= -11 A
0.013
0.017
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
t
r
Turn - On Rise Time
On-State Drain Current
-50
A
Forward Transconductance
45
S
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
4800
pF
1100
pF
460
pF
V
DS
= -10 V, I
D
= -1 A
V
GEN
= -4.5 V, R
GEN
= 6
30
50
ns
20
35
ns
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
Turn - Off Delay Time
175
250
ns
Turn - Off Fall Time
80
110
ns
Total Gate Charge
V
DS
= -15 V, I
D
= -10 A,
V
GS
= -4.5 V
50
70
nC
Gate-Source Charge
8
nC
Gate-Drain Charge
11
nC
-2.1
A
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
-0.7
-1.2
V
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDS6575 Rev.C1
c. 125
O
C/W on a 0.006 in
2
pad
of 2oz copper.
b. 105
O
C/W on a 0.04 in
2
pad of 2oz copper.
a. 50
O
C/W on a 1 in
2
pad
of 2oz copper.
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PDF描述 |
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| FDS6576 | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDS6609A | P-Channel Logic Level PowerTrench MOSFET |
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| FDS6630 | N-Channel Logic Level PowerTrenchTM MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6575 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETP SO-8 ((NW)) |
| FDS6575 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| FDS6575_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench?MOSFET |
| FDS6575A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS6576 | 功能描述:MOSFET SO-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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