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參數(shù)資料
| 型號： | FDS4897C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N & P-Channel PowerTrench MOSFET |
| 中文描述： | 6200 mA, 40 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SO-8 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 164K |
| 代理商： | FDS4897C |
FDS4897C Rev C(W)
www.fairchildsemi.com
Typical Characteristics: Q2 (P-Channel)
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-6.0V
-4.0V
-4.5V
-3.0V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
5
10
15
20
25
30
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= - 3.5V
-6.0V
-4.5V
-4.0V
-10V
Figure 13. On-Region Characteristics.
Figure 14. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -4.4A
V
GS
= - 10V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -2.2A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 15. On-Resistance Variation with
Temperature.
Figure 16. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
1.5
2
2.5
3
3.5
4
4.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -10V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 17. Transfer Characteristics.
Figure 18. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
M
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