參數(shù)資料
型號： FDS4897C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual N & P-Channel PowerTrench MOSFET
中文描述： 6200 mA, 40 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, SO-8
文件頁數(shù)： 2/9頁
文件大小： 164K
代理商： FDS4897C
FDS4897C Rev C(W)
www.fairchildsemi.com
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 3)
E
AS
Drain-Source Avalanche
Energy (Single Pulse)
V
DD
= 40 V, I
D
= 7.3 A, L = 1 mH
Q1
27
mJ
V
DD
= –40 V, I
D
=–8.7 A, L = 1 mH
Q2
Q1
Q2
38
mJ
A
I
AS
Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
Δ
BV
DSS
Δ
T
J
I
DSS
Zero Gate Voltage Drain
Current
I
GSS
Gate-Body Leakage
7.3
–8.7
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
DS
= 32 V,
V
GS
= 0 V
V
DS
= –32 V,
V
GS
= 0 V
V
GS
=
±
20 V, V
DS
= 0 V
I
D
= 250
μ
A
I
D
= –250
μ
A
Q1
Q2
Q1
Q2
Q1
Q2
All
40
–40
V
Breakdown Voltage
Temperature Coefficient
34
–40
mV/
°
C
μ
A
1
–1
±
100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 6.2 A, T
J
= 125
°
C
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –4.4 A, T
J
= 125
°
C
V
DS
= 10 V,
I
D
= 6.2 A
V
DS
= –10 V,
I
D
=–4.4 A
I
D
= 250
μ
A
I
D
= –250 μA
Q1
Q2
Q1
Q2
Q1
1
–1
1.9
–1.7
–5
4
21
26
29
37
50
55
21
12
3
–3
V
Δ
V
GS(th)
Δ
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
m
Ω
I
D
= 6.2 A
I
D
= 4.8 A
29
36
43
46
63
73
I
D
= –4.4 A
I
D
= –3.8 A
Q2
g
FS
Forward Transconductance
Q1
Q2
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
760
1050
100
140
60
70
1.2
9
pF
pF
pF
Ω
C
oss
Output Capacitance
C
rss
Reverse Transfer
Capacitance
Gate Resistance
Q1
V
DS
= 20 V, V
GS
= 0 V, f = 1.0 MHz
Q2
V
DS
= –20 V, V
GS
= 0 V, f = 1.0 MHz
f = 1.0 MHz
R
G
F
M
相關(guān)PDF資料
PDF描述
FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET
FDS4935 Dual 30V P-Channel PowerTrench MOSFET
FDS4935A Dual 30V P-Channel PowerTrench MOSFET
FDS4953 RES ARRAY 360 OHM 4TERM 2RES SMD
FDS6612A EVALUATION KIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS4935 功能描述:MOSFET 30V P-CH DUAL PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4935A 功能描述:MOSFET -30V Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4935A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDS4935A_Q 功能描述:MOSFET -30V Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4935A-CUT TAPE 制造商:FAIRCHILD 功能描述:FDS4935A Series 30 V 23 mOhm Dual 30V P-Channel PowerTrench Mosfet SOIC-8
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*