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參數(shù)資料
| 型號： | FDS4935BZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 6900 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 163K |
| 代理商： | FDS4935BZ |
2006 Fairchild Semiconductor Corporation
FDS4935BZ Rev B1 (W)
FDS4935BZ
Dual 30 Volt P-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
P-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
x
–6.9 A, –30 V. R
DS(ON)
= 22 m
:
@ V
GS
= –10 V
R
DS(ON)
= 35 m
:
@ V
GS
= – 4.5 V
x
Extended V
GSS
range (–25V) for battery applications
x
ESD protection diode (note 3)
x
High performance trench technology for extremely
low R
DS(ON)
x
High power and current handling capability
D
D2
SO-8
D
D
D
D2
D1
D1
S2G2S1G1
Pin 1
SO-8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DS\
Parameter
Ratings
–30
Units
V
Drain-Source Voltage
V
GS
Gate-Source Voltage
+25
V
I
D
Drain Current – Continuous
(Note 1a)
–6.9
A
– Pulsed
–50
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
P
D
(Note 1c)
0.9
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
q
C
Thermal Characteristics
R
T
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
q
C/W
q
C/W
R
T
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4935BZ
FDS4935BZ
13’’
12mm
2500 units
4
3
2
1
5
6
7
8
Q1
Q2
F
tm
September 2006
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS4935BZ-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS4935BZ Series 30 V 22 mOhm Dual 30 Volt P-Channel PowerTrench Mosfet SOIC-8 |
| FDS4953 | 功能描述:MOSFET SO-8 P-CH DUAL -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4953_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual 30V P-Channel PowerTrench MOSFET |
| FDS5170N7 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS5351 | 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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