參數(shù)資料
型號： FDS4935BZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual 30 Volt P-Channel PowerTrench MOSFET
中文描述： 6900 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： LEAD FREE, SOP-8
文件頁數(shù)： 2/5頁
文件大小： 163K
代理商： FDS4935BZ
FDS4935BZ Rev B1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
'
BV
DSS
'
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V,
I
D
= –250
P
A
–30
V
Breakdown Voltage Temperature
I
D
= –250
P
A,Referenced to 25
q
C
24
mV/
q
C
V
DS
= –24 V, V
GS
= 0 V
–1
P
A
P
A
I
GSS
Gate–Body Leakage
V
GS
= +25 V, V
DS
= 0 V
+10
On Characteristics
V
GS(th)
Gate Threshold Voltage
'
V
GS(th)
'
T
J
Temperature Coefficient
r
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
P
A
I
D
= –250
P
A,Referenced to 25
q
C
–1
–1.9
–3
V
Gate Threshold Voltage
–5
mV/
q
C
V
GS
= –10 V, I
D
= –6.9 A
V
GS
= –4.5 V, I
D
= –5.3 A
V
GS
= –10 V, I
D
= –6.9A,T
J
=125
q
C
V
DS
= –5 V, I
D
= –6.9 A
18
27.5
26
22
35
34
m
:
g
FS
Forward Transconductance
22
S
Dynamic Characteristics
C
iss
Input Capacitance
1360
pF
C
oss
Output Capacitance
240
pF
C
rss
Reverse Transfer Capacitance
V
DS
= –15 V, V
GS
= 0 V,
f = 1.0 MHz
200
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
12
22
ns
t
r
Turn–On Rise Time
13
23
ns
t
d(off)
Turn–Off Delay Time
68
108
ns
t
f
Turn–Off Fall Time
V
DD
= –15 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6
:
38
61
ns
Q
g(TOT)
Total Gate Charge, V
GS
= 10V
29
40
nC
Q
g(TOT)
Total Gate Charge, V
GS
= 5V
16
23
nC
Q
gs
Gate–Source Charge
4
nC
Q
gd
Gate–Drain Charge
V
DS
= –15 V, I
D
= –6.9 A,
V
GS
= –10 V
7
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
RR
Reverse Recovery Time
–2.1
A
V
SD
V
GS
= 0 V,
I
S
= –2.1 A
(Note 2)
–0.8
–1.2
V
24
ns
Q
RR
Reverse Recovery Charge
I
F
= –8.8 A,
d
iF
/d
t
= 100 A/μs
(Note 2)
9
nC
Notes:
1.
R
T
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
T
JC
is guaranteed by design while R
T
CA
is determined by the user's board design.
a) 78°C/W steady state
when mounted on a
1in
2
pad of 2 oz
copper
b) 125°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
P
s, Duty Cycle < 2.0%
3.
The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
F
相關PDF資料
PDF描述
FDS4935 Dual 30V P-Channel PowerTrench MOSFET
FDS4935A Dual 30V P-Channel PowerTrench MOSFET
FDS4953 RES ARRAY 360 OHM 4TERM 2RES SMD
FDS6612A EVALUATION KIT
FDS4953 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
FDS4935BZ-CUT TAPE 制造商:FAIRCHILD 功能描述:FDS4935BZ Series 30 V 22 mOhm Dual 30 Volt P-Channel PowerTrench Mosfet SOIC-8
FDS4953 功能描述:MOSFET SO-8 P-CH DUAL -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4953_02 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual 30V P-Channel PowerTrench MOSFET
FDS5170N7 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS5351 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*