參數(shù)資料
型號: FDS4897C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Dual N & P-Channel PowerTrench MOSFET
中文描述: 6200 mA, 40 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT, SO-8
文件頁數(shù): 5/9頁
文件大?。?/td> 164K
代理商: FDS4897C
FDS4897C Rev C(W)
www.fairchildsemi.com
Typical Characteristics: Q1 (N-Channel)
0
2
4
6
8
10
0
4
8
12
16
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 7A
V
DS
= 10V
30V
20V
0
200
400
600
800
1000
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 10.0V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
I
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
1
10
100
0.01
0.1
t
AV
, TIME IN AVANCHE(ms)
1
10
I
(
,
T
J
= 25
o
C
Figure 11. Single Pulse Maximum Peak
Current.
Figure 12. Unclamped Inductive Switching
Capability.
F
M
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