參數(shù)資料
型號(hào)： FDJ1032C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:120V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:9100ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
中文描述： 3.2 A, 20 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： FLMP, SC-75, 6 PIN
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 650K
代理商： FDJ1032C
3
www.fairchildsemi.com
FDJ1032C Rev. B1(W)
F
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
Q
g
Total Gate Charge
Q1:
V
DS
= –10 V, I
D
= –2.8 A, V
GS
= –4.5V
Q2:
V
DS
= 10 V, I
D
= 3.2 A, V
GS
= 4.5 V
Q1
Q2
3
2
4
3
nC
Q
gs
Gate-Source Charge
Q1
Q2
0.65
0.4
nC
Q
gd
Gate-Drain Charge
Q1
Q2
0.75
1.0
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
–1.25
1.25
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –1.3 A (Note 2)
V
GS
= 0 V, I
S
= 1.3 A (Note 2)
I
F
= –4.2A, d
IF
/d
t
= 100 A/
μ
s
I
F
= 5.9A, d
IF
/d
t
= 100 A/
μ
s
I
F
= –4.2A, d
IF
/d
t
= 100 A/
μ
s
I
F
= 5.9A, d
IF
/d
t
= 100 A/
μ
s
Q1
Q2
–0.8
0.8
–1.2
1.2
V
t
rr
Diode Reverse Recovery Time
Q1
Q2
14
11
nS
Q
rr
Diode Reverse Recovery
Charge
Q1
Q2
4
2.5
nC
a)
80°C/W when mounted
on a 1in
pad of 2 oz
copper (Single Opera-
tion).
b)
140°C/W when mounted on a
minimum pad of 2 oz copper
(Single Operation).
Electrical Characteristics (Continued)
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
相關(guān)PDF資料
PDF描述
FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET
FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET
FDJ129 P-Channel -2.5 Vgs Specified PowerTrench MOSFET
FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDJ1032C_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET
FDJ127P 功能描述:MOSFET P-Ch -1.8 Vgs Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ128N 功能描述:MOSFET N-Ch PowerTrench 2.5Vgs Specified RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ128N_F077 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ129 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel -2.5 Vgs Specified PowerTrench MOSFET
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