參數(shù)資料
型號： FDJ1032C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:120V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:9100ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
中文描述： 3.2 A, 20 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： FLMP, SC-75, 6 PIN
文件頁數(shù)： 2/9頁
文件大?。?/td> 650K
代理商： FDJ1032C
2
www.fairchildsemi.com
FDJ1032C Rev. B1(W)
F
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.H
FDJ1032C
7"
8mm
3000 units
Electrical Characteristics
Symbol
Off Characteristics
Parameter
Test Conditions
Type
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown
Voltage
V
V
GS
GS
= –250 μA, Referenced to 25
= 250 μA, Referenced to 25
= 0 V, I
= 0 V, I
D
D
= –250 μA
= 250 μA
Q1
Q2
–20
20
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
I
D
D
°
C
C
°
Q1
Q2
–13
13
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current V
DS
DS
= –16 V, V
= 16 V, V
GS
GS
= 0 V
= 0 V
V
Q1
Q2
–1
1
μ
A
I
GSS
Gate-Body Leakage
V
V
GS
GS
= ±8 V, V
= ±12 V, V
DS
= 0 V
= 0 V
DS
Q1
Q2
±100
±100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
V
DS
DS
= –250 μA, Referenced to 25
= 250 μA, Referenced to 25
= V
= V
GS
GS
, I
, I
D
D
= –250 μA
= 250 μA
Q1
Q2
–0.4
0.6
–0.8
1.0
–1.5
1.5
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
I
D
D
V
V
V
V
°
C
C
°
Q1
Q2
3
–3
mV/
°
C
R
DS(on)
Static Drain-Source
On-Resistance
GS
GS
GS
GS
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –4.5 V, I
D
D
D
D
= 3.2 A
= 2.7 A
= 3.2, T
= –2.8 A
= –2.2 A
= –1.7 A
=2.8A, T
J
= 125
°
C
Q1
108
163
283
150
160
230
390
238
m
V
V
V
GS
GS
GS
= 4.5 V, I
= 2.5 V, I
= 4.5 V, I
D
D
D
= – 2.8 A
= 3.2 A
J
= 125
°
C
Q2
70
100
83
90
130
132
g
FS
Forward Transconductance
V
V
DS
DS
= –5 V, I
= 5 V, I
D
D
Q1
Q2
5
7.5
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1:
V
DS
= –10 V, V
GS
= 0 V, f = 1.0 MHz
Q2:
V
DS
= 10 V, V
GS
= 0 V, f = 1.0 MHz
Q1
Q2
290
200
pF
C
oss
Output Capacitance
Q1
Q2
55
50
pF
C
rss
Reverse Transfer Capacitance
Q1
Q2
29
30
pF
R
G
Gate Resistance
V
GS
=
15mV, f = 1.0 MHz
Q1
Q2
18
10
Switching Characteristics
t
d(on)
Turn-On Delay Time
Q1:
V
DD
V
GS
= –10 V, I
= –4.5 V, R
D
= –1 A,
GEN
= 6
Q2:
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5V, R
GEN
= 6
Q1
Q2
8
7
16
14
ns
t
r
Turn-On Rise Time
Q1
Q2
13
8
23
16
ns
t
d(off)
Turn-Off Delay Time
Q1
Q2
13
11
23
20
ns
t
f
Turn-Off Fall Time
Q1
Q2
18
2
32
4
ns
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參數(shù)描述
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