參數(shù)資料
型號(hào): FDJ129
廠商: Fairchild Semiconductor Corporation
英文描述: P-Channel -2.5 Vgs Specified PowerTrench MOSFET
中文描述: P通道-2.5指定的PowerTrench MOSFET的柵極電壓
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 176K
代理商: FDJ129
July 2004
2004 Fairchild Semiconductor Corporation
FDJ129P Rev F1 W)
FDJ129P
P-Channel -2.5 Vgs Specified PowerTrench
MOSFET
General Description
This P-Channel -2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Features
–4.2 A, –20 V.
R
DS(ON)
= 70 m
@ V
GS
= –4.5 V
R
DS(ON)
= 120 m
@ V
GS
= –2.5 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC75-6 surface mount
package
S
S
S
S
S
G
SC75-6 FLMP
3
2
1
4
5
6
Bottom Drain
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Parameter
Ratings
–20
±
12
–4.2
–16
1.6
–55 to +150
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
.A
FDJ129P
(Note 1a)
77
°
C/W
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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