- 您現在的位置：買賣IC網 > PDF目錄375775 > FDJ129 (Fairchild Semiconductor Corporation) P-Channel -2.5 Vgs Specified PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | FDJ129 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel -2.5 Vgs Specified PowerTrench MOSFET |
| 中文描述： | P通道-2.5指定的PowerTrench MOSFET的柵極電壓 |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 176K |
| 代理商： | FDJ129 |
FDJ129P Rev F1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A,Referenced to 25
°
C
I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
–18
mV/
°
C
V
DS
= –16 V, V
GS
= 0 V
V
GS
= 12 V,
V
GS
= –12 V, V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
V
DS
= 0 V
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A,Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –4.2 A
V
GS
= –2.5 V,
V
GS
= –4.5 V, I
D
= –4.2,T
J
=125
°
C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V, I
D
= –4.2 A
I
D
= –250
μ
A
–0.6
–1.1
3
–1.5
V
Gate Threshold Voltage
mV/
°
C
I
D
= –3.3 A
54
91
72
11
70
120
100
m
A
S
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–8
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
585
124
61
pF
pF
pF
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
10
9
17
10
4
1.1
1.2
20
18
30
20
6
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6
V
DS
= –10 V, I
D
= –4.2 A,
V
GS
= –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forwar Voltage
V
GS
= 0 V,
I
S
= –1.5 A
(Note 2)
–0.7
–1.2
V
t
rr
Q
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
16
13
nS
nC
I
F
= –4.2 A,
d
iF
/d
t
= 100 A/μs
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
77°C/W when mounted
on a 1in
pad of 2 oz
copper.
b)
110°C/W when mounted
on a minimum pad of 2 oz
copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDJ129P | P-Channel -2.5 Vgs Specified PowerTrench MOSFET |
| FDLL300A | High Conductance Low Leakage Diode |
| FDLL3595 | High Conductance, Low Leakage Diode |
| FDLL4009 | Ultra High Speed Diodes |
| FDLL4148 | High Conductance Fast Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDJ129P | 功能描述:MOSFET P-Ch -2.5Vgs Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDJ129P_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel -2.5 Vgs Specified PowerTrench MOSFET |
| FDJ129P_F077 | 功能描述:MOSFET PCh-2.5V PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDJ697P | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDK150-830 | 制造商:AXIOMTEK 制造商全稱:AXIOMTEK 功能描述:Front panel open frame design |
發(fā)布緊急采購，3分鐘左右您將得到回復。