參數(shù)資料
型號(hào)： F25L004A-50PG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： PROM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 512K X 8 FLASH 3V PROM, PDSO8
封裝： 0.150 INCH, ROHS COMPLIANT, SOIC-8
文件頁(yè)數(shù)： 12/32頁(yè)
文件大?。?/td> 393K
代理商： F25L004A-50PG
ES MT
Byte-Program
The Byte-Program instruction programs the bits in the selected
byte to the desired data. The selected byte must be in the erased
state (FFH) when initiating a Program operation. A Byte-Program
instruction applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE must remain active low for
the duration of the Byte-Program instruction. The Byte-Program
F25L004A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
12/32
Publication Date
:
Apr. 2007
instruction is initiated by executing an 8-bit command, 02H,
followed by address bits [A
23
-A
0
]. Following the address, the data
is input in order from MSB (bit 7) to LSB (bit 0). CE must be
driven high before the instruction is executed. The user may poll
the Busy bit in the software status register or wait TBP for the
completion of the internal self-timed Byte-Program operation.
See Figure 4 for the Byte-Program sequence.
Figure 4 : BYTE-PROGRAM SEQUENCE
CE
SCK
SI
0 1 2 3 4 5 6 7 8
1516
2324
3132
39
LSB
MSB
MSB
HIGHIMPENANCE
SO
02
ADD.
ADD.
ADD.
MODE3
MODE0
D
IN
MSB
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參數(shù)描述
F25L004A-50PIG 制造商:ELITE SEMICONDUCTOR 功能描述:FLASH 4MB 3V SPI 50MHZ SOIC8
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