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參數(shù)資料
| 型號： | EDI8L21664V |
| 英文描述： | 2x64Kx16 SRAM(3.3V,2x64Kx16靜態(tài)RAM) |
| 中文描述： | 2x64Kx16 SRAM的電壓（3.3V，2x64Kx16靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 60K |
| 代理商： | EDI8L21664V |
EDI8L21664V
2x64Kx16SRAM
1
EDI8L21664V Rev. 0 1/98 ECO #9704
Features
DSP Memory Solution
Texas Instruments TMS320C54x
3.3V Operating Supply Voltage
Access Times of 10, 12 and 15ns
Single Write Control and Output Enable Lines
One Chip Enable Line per Memory Bank
50% Space Savings vs. Monolithic TSOPs
Upgrade Path Available in Same Footprint
Multiple VCC and VSS Pins
Reduced Inductance and Capacitance
74 pin BGA, JEDEC MO-151
The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM
constructed with two 64Kx16 die mounted on a multi-
layer laminate substrate. The device is packaged in a 74
lead, 15mm by 15mm, BGA.
Operating with a 3.3V power supply and with access
times as fast as 10ns, the device allows the user to
develop a fast external memory for Texas Instuments'
TMS320C54x DSP.
The device consists of two separate banks of 64Kx16 of
memory. Each bank has a separate Chip Enable pin and
higher order address select pin. Bank 'A' is controlled
using CE1\ and A15A. Bank 'B' is controlled using CE2\
and A15B. The two banks have common I/Os (DQ0-15)
and control lines (WE\ and G\).
TMS320C54x External SRAM
Memory Solution
Pin Configurations
VSS
VCC
DQ15 DQ14
VCC
DQ13 DQ11
DQ9
DQ8
N/C
VSS
VCC
VSS
VCC
DQ12 DQ10
DQ4
VCC
VSS
VCC
VSS
VCC
VSS
VCC
VSS
VCC
A15A CE1\
DQ3
DQ7
N/C
WE\
DQ5
DQ0
VSS
CE2\
DQ6
DQ1
VSS
A14
VCC
DQ2
N\C
VSS
A12
VCC
A10
A8
VSS
A6
A4
A2
A0
G\
A15B
A13
VCC
A11
A9
VSS
A7
VSS
A5
A3
A1
1
23456789
10
11
1
23456789
10
11
A
B
C
D
E
F
G
H
J
K
L
A
B
C
D
E
F
G
H
J
K
L
Electronic Designs Incorporated
One Research Drive Westborough, MA 01581 USA 508-366-5151 FAX 508-836-4850
http://www.electronic-designs.com
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