參數(shù)資料
型號: EDI8L32128C17AI
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: SRAM
英文描述: 128Kx32 CMOS High Speed Static RAM
中文描述: 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, PQCC68
封裝: PLASTIC, MO-47AE, LCC-68
文件頁數(shù): 1/5頁
文件大?。?/td> 289K
代理商: EDI8L32128C17AI
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
EDI8L32128C
August, 2002
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
128Kx32 CMOS High Speed Static RAM
128Kx32 bit CMOS Static
Random Access Memory Array
Fast Access Times: 12, 15, 17, 20, and 25ns
Individual Byte Enables
User Congurable Organization with Minimal
Additional Logic
Master Output Enable and Write Control
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
Surface Mount Package
68 Lead PLCC, No. 99 (JEDEC MO-47AE)
Small Footprint, 0.990 Sq. In.
Multiple Ground Pins for Maximum Noise
Immunity
Single +5V (±5%) Supply Operation
The EDI8L32128C is a high speed, high performance,
four megabit density Static RAM organized as a 128Kx32
bit array.
Four Chip Enables, Write Control, and Output Enable
provide the user with a exible memory solution. The user
may independently enable each of the four bytes, and,
with minimal additional peripheral logic, the unit may be
congured as a 256Kx16 or 512Kx8 array.
Fully asynchronous circuitry is used, requiring no clocks or
refreshing for operation and providing equal access and
cycle times for ease of use.
The EDI8L32128C, allows 4 megabits of memory to be
placed in less than 0.990 square inches of board space; a
savings of 0.885 square inches over four standard 128Kx8
components.
NOTE: Pin 2 & 67 on the 64Kx32 (EDI8L3265C) and the 256Kx32 (EDI8L32256C) are word select pins.
BLOCK DIAGRAM
FIG. 1 PIN CONFIGURATION
PIN DESCRIPTION
A-16
Address Inputs
E-3#
Chip Enables (One per Byte)
W#
Master Write Enable
G#
Master Output Enable
DQ-31
Common Data Input/Output
VCC
Power (+5V±5%)
VSS
Ground
NC
No Connection
TOP VIEW
DQ0-DQ7
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
128Kx32
Memory
Array
A0-A16
G#
W#
E0#
E1#
E2#
E3#
17
DQ17
DQ18
DQ19
VSS
DQ20
DQ21
DQ22
DQ23
VCC
DQ24
DQ25
DQ26
DQ27
VSS
DQ28
DQ29
DQ30
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
VCC
DQ7
DQ6
DQ5
DQ4
VSS
DQ3
DQ2
DQ1
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
DQ31
A6
A5
A4
A3
A2
A1
A0
V
CC
A13
A12
A1
1
A10
A9
A8
A7
DQ0
9
8
7
6
5
4
3
2
1
68
67
66
65
64
63
62
61
DQ16
NC
E3#
E2#
E1#
E0#
NC
V
CC
NC
G#
W#
A16
A15
A14
DQ15
FEATURES
DESCRIPTION
NOTE: Solder Reow temperature should not exceed 230°C
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