參數(shù)資料
型號： DXTA13
廠商： DC Components Co., Ltd.
英文描述： TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
中文描述： 技術(shù)規(guī)格NPN達林頓晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 99K
代理商： DXTA13
DXTA13
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for applications requiring extremely high
current gain.
SOT-89
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
.167(4.25)
.159(4.05)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.060(1.52)
.058(1.48)
.020(0.51)
.014(0.36)
.102(2.60)
.095(2.40)
1
2
3
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
P
D
T
J
T
STG
Rating
30
30
10
300
1
+150
-55 to +150
Unit
V
V
V
mA
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
Min
30
30
10
-
-
-
-
5K
10K
125
Typ
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
1.5
2
-
-
-
Unit
V
V
V
nA
nA
V
V
-
-
MHz
Test Conditions
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter On Voltage
(1)
I
C
=100
μ
A, I
E
=0
I
C
=100
μ
A, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=100mA, I
B
=0.1mA
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=100mA, V
CE
=5V
V
CE
=5V, f=100MHz, I
C
=10mA
DC Current Gain
(1)
Transition Frequency
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DXTA42 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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DXTA44 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTA92 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
DXTA92-13 功能描述:兩極晶體管 - BJT 1000mW -300Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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