參數(shù)資料
型號： DXTA94
廠商： DC Components Co., Ltd.
英文描述： TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 技術(shù)參數(shù)的PNP外延平面晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 99K
代理商： DXTA94
DXTA94
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for applications requiring high breakdown
voltage.
SOT-89
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
.167(4.25)
.159(4.05)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.060(1.52)
.058(1.48)
.020(0.51)
.014(0.36)
.102(2.60)
.095(2.40)
1
2
3
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
-400
-400
-6
-500
1
+150
-55 to +150
Unit
V
V
V
mA
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)
h
FE1
h
FE2
h
FE3
h
FE4
Min
-400
-400
-6
-
-
-
-
-
-
-
40
50
45
40
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-100
-500
-100
-0.35
-0.5
-0.75
-0.75
-
300
-
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
Test Conditions
I
C
=-100
μ
A
I
C
=-1mA
I
E
=-10
μ
A
V
CB
=-400V
V
CE
=-400V, V
BE
=0
V
EB
=-6V
I
C
=-1mA, I
B
=-0.1mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-1mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V
I
C
=-100mA, V
CE
=-10V
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
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