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參數(shù)資料
| 型號： | DXTD965 |
| 廠商： | DC Components Co., Ltd. |
| 英文描述： | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 技術規(guī)格晶體管瑞展 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 99K |
| 代理商： | DXTD965 |
DXTD965
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for use in AF output amplifier and flash unit.
SOT-89
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
.167(4.25)
.159(4.05)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.060(1.52)
.058(1.48)
.020(0.51)
.014(0.36)
.102(2.60)
.095(2.40)
1
2
3
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (peak PT=10mS)
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
T
J
T
STG
Rating
40
20
7
5
8
1.2
+150
-55 to +150
Unit
V
V
V
A
A
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE1
h
FE2
f
T
C
ob
Min
40
20
7
-
-
-
340
150
-
-
Typ
-
-
-
-
-
0.35
-
-
150
-
Max
-
-
-
0.1
0.1
1
800
-
-
50
Unit
V
V
V
μ
A
μ
A
V
-
-
MHz
pF
Test Conditions
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
I
C
=100
μ
A
I
C
=1mA
I
E
=10
μ
A
V
CB
=10V
V
EB
=7V
I
C
=3A, I
B
=0.1A
I
C
=0.5A, V
CE
=2V
I
C
=2A, V
CE
=2V
I
E
=50mA, V
CE
=6V
V
CB
=20V, f=1MHz
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
Rank
Range
R
S
340~600
560~800
Classification of h
FE1
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