參數(shù)資料
型號(hào)： DXTB772
廠商： DC Components Co., Ltd.
英文描述： TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 技術(shù)參數(shù)的PNP外延平面晶體管
文件頁數(shù)： 1/1頁
文件大小： 100K
代理商： DXTB772
DXTB772
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for use in output stage amplifier, voltage
regulator, DC-DC converter and driver.
(1)Single pulse PW=1ms
(2)When tested in free air condition, without heat sinking.
(3)When mounted on a 40x40X1mm ceramic board.
(4)Printed circuit board 2mm thick, collector plating 1cm square or larger.
(5)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%.
Classification of h
FE2
SOT-89
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
.167(4.25)
.159(4.05)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.060(1.52)
.058(1.48)
.020(0.51)
.014(0.36)
.102(2.60)
.095(2.40)
1
2
3
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (pulse)
(1)
Total Power Dissipation
(2)
Total Power Dissipation
(3)
Total Power Dissipation
(4)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
P
D
P
D
T
J
T
STG
Rating
-40
-30
-5
-3
-7
1
2
1.5
+150
-55 to +150
Unit
V
V
V
A
A
W
W
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
C
ob
Min
-40
-30
-5
-
-
-
-
30
100
-
-
Typ
-
-
-
-
-
-0.3
-1
-
160
80
55
Max
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit
V
V
V
μ
A
μ
A
V
V
-
-
MHz
pF
Test Conditions
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
5)
Base-Emitter Saturation Voltage
(
5)
I
C
=-100
μ
A
I
C
=-1mA
I
E
=-10
μ
A
V
CB
=-30V
V
EB
=-3V
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
I
C
=-20mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V
I
C
=-100mA, V
CE
=-5V, f=100MHz
V
CB
=-10V, f=1MHz
DC Current Gain
(5)
Transition Frequency
Output Capacitance
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
Rank
Range
Q
P
E
100~200
160~320
250~500
相關(guān)PDF資料
PDF描述
DXTD882 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTD965 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DY 10 AMPERES - HIGH SURGE SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK-CHASSIS-P.C. BOARD MOUNTING
DY05 10 AMPERES - HIGH SURGE SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK-CHASSIS-P.C. BOARD MOUNTING
DY10 10 AMPERES - HIGH SURGE SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK-CHASSIS-P.C. BOARD MOUNTING
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DXTD882 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTD965 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTN07100BP5 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI?5
DXTN07100BP5-13 功能描述:兩極晶體管 - BJT 100V NPN TRANSISTOR 3.2W Ic 2A Icm 6A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DXTP03200BP5 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:200V PNP HIGH VOLTAGE TRANSISTOR PowerDI?5
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*