參數(shù)資料
型號(hào)： DXTA42
廠商： DC Components Co., Ltd.
英文描述： TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 技術(shù)規(guī)格晶體管瑞展
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 99K
代理商： DXTA42
DXTA42
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for application as a video output to drive
color CRT, or as a dialer circuit in electronics
telephone.
SOT-89
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
.167(4.25)
.159(4.05)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.060(1.52)
.058(1.48)
.020(0.51)
.014(0.36)
.102(2.60)
.095(2.40)
1
2
3
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
300
300
6
500
1
+150
-55 to +150
Unit
V
V
V
mA
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
h
FE3
f
T
C
ob
Min
300
300
6
-
-
-
-
25
40
40
50
-
Typ
-
-
-
-
-
-
-
-
-
-
-
3
Max
-
-
-
100
100
0.5
0.9
-
-
-
-
-
Unit
V
V
V
nA
nA
V
V
-
-
-
MHz
pF
Test Conditions
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter Saturation Voltage
(1)
I
C
=100
μ
A
I
C
=1mA
I
E
=10
μ
A
V
CB
=260V
V
EB
=6V
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=20V
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
相關(guān)PDF資料
PDF描述
DXTA44 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTA92 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
DXTA94 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
DXTB772 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
DXTD882 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DXTA42-13 功能描述:兩極晶體管 - BJT 1000mW 300Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DXTA44 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTA92 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
DXTA92-13 功能描述:兩極晶體管 - BJT 1000mW -300Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DXTA94 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*