參數(shù)資料
型號(hào)： DXT5551
廠商： DC Components Co., Ltd.
英文描述： TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 技術(shù)規(guī)格晶體管瑞展
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 99K
代理商： DXT5551
DXT5551
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for general purpose applications requiring
high breakdown voltages.
SOT-89
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
.167(4.25)
.159(4.05)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.060(1.52)
.058(1.48)
.020(0.51)
.014(0.36)
.102(2.60)
.095(2.40)
1
2
3
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
180
160
6
500
1.2
+150
-55 to +150
Unit
V
V
V
mA
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
h
FE1
h
FE2
h
FE3
f
T
C
ob
Min
180
160
6
-
-
-
-
-
-
80
80
30
100
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
50
50
0.15
0.2
1
1
-
250
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
I
C
=100
μ
A
I
C
=1mA
I
E
=10
μ
A
V
CB
=120V
V
EB
=4V
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=1mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=50mA, V
CE
=5V
V
CE
=10V, f=100MHz, I
C
=10mA
V
CB
=10V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
相關(guān)PDF資料
PDF描述
DXTA13 TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
DXTA42 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTA44 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTA92 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
DXTA94 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DXT5551-13 功能描述:兩極晶體管 - BJT 1W 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DXT5551P5 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:160V NPN HIGH VOLTAGE TRANSISTOR PowerDI?5
DXT5551P5_1011 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:160V NPN HIGH VOLTAGE TRANSISTOR
DXT5551P5-13 功能描述:兩極晶體管 - BJT BIPOLAR TRANS,NPN 160V, 600mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DXT651 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*