參數(shù)資料
型號(hào): DXT3906
廠商: DC Components Co., Ltd.
英文描述: TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
中文描述: 技術(shù)參數(shù)的PNP外延平面晶體管
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 99K
代理商: DXT3906
DXT3906
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and
amplifier applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
SOT-89
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
.167(4.25)
.159(4.05)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.060(1.52)
.058(1.48)
.020(0.51)
.014(0.36)
.102(2.60)
.095(2.40)
1
2
3
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
-40
-40
-5
-200
1
+150
-55 to +150
Unit
V
V
V
mA
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
-0.65
V
BE(sat)2
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
f
T
C
ob
Min
-40
-40
-5
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-50
-0.25
-0.4
-0.85
-0.95
-
-
300
-
-
-
4.5
Unit
V
V
V
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
I
C
=-100
μ
A
I
C
=-1mA
I
E
=-10
μ
A
V
CE
=-30V, V
BE
=-3V
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-100
μ
A, V
CE
=-1V
I
C
=-1mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-1V
I
C
=-50mA, V
CE
=-1V
I
C
=-100mA, V
CE
=-1V
V
CE
=-20V, f=100MHz, I
C
=-10mA
V
CB
=-5V, f=1MHz
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter Saturation Voltage
(1)
-
60
80
100
60
30
250
-
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
相關(guān)PDF資料
PDF描述
DXT5401 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
DXT5551 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTA13 TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
DXTA42 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTA44 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DXT3906-13 功能描述:兩極晶體管 - BJT 1000mW -40Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DXT458P5 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR PowerDI?5
DXT458P5-13 功能描述:兩極晶體管 - BJT BIPOLAR TRANS,NPN 400V,300mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DXT491.8432A323050 制造商:Alpha 3 Manufacturing 功能描述:
DXT4910.000A20 制造商:DUBILIER 制造商全稱:Dubilier 功能描述:CRYSTALS RESISTANCE WELDED HOLDER DXT49