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參數(shù)資料
| 型號(hào)： | DT28F160S3-100 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 2M X 8 FLASH 2.7V PROM, 100 ns, PDSO56 |
| 封裝： | 16 X 23.70 MM, SSOP-56 |
| 文件頁(yè)數(shù)： | 42/52頁(yè) |
| 文件大小： | 1262K |
| 代理商： | DT28F160S3-100 |
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28F160S3, 28F320S3
E
42
ADVANCE INFORMATION
6.2.3
DC CHARACTERISTICS
Table 19. DC Characteristics
, T
A
=
–40
o
C to +85
o
C
Sym
Parameter
Notes
Typ
Max
Unit
Conditions
I
LI
Input Load Current
1
±
0.5
μ
A
V
CC
= V
CC1/2
Max
V
IN
= V
CC1/2
or GND
I
LO
Output Leakage Current
1
±
0.5
μ
A
V
CC
= V
CC1/2
Max
V
out
= V
CC1/2
or GND
I
CCS
V
CC
Standby Current
1,3,6
20
100
μ
A
CMOS Inputs
V
CC
= V
CC1/2
Max
CE
X
# = RP# = V
CC
± 0.2V
0.2
2
mA
TTL Inputs
V
CC
= V
CC1/2
Max
CE
X
# = RP# = V
IH
I
CCD
V
CC
Deep Power-Down
Current
1
20
μ
A
RP# = GND ± 0.2V
I
OUT
(RY/BY#) = 0 mA
I
CCR
V
CC
Read Current
1,5,6
25
mA
CMOS Inputs
V
CC
= V
CC1/2
Max
CE
X
# = GND
f = 5 MHz, I
OUT
= 0 mA
30
mA
TTL Inputs
V
CC
= V
CC1/2
Max
CE
X
# = V
IL
f = 5 MHz, I
OUT
= 0 mA
I
CCW
V
CC
Programming and Set
Lock-Bit Current
1,7
17
mA
V
PP
= V
PPH1/2
I
CCE
V
CC
Block Erase or Clear
Block Lock-Bits Current
1,7
17
mA
V
PP
= V
PPH1/2
I
CCWS
I
CCES
V
CC
Program Suspend or
Block Erase Suspend
Current
1,2
1
6
mA
CE
X
# = V
IH
I
PPS
V
PP
Standby or V
PP
Read
1
± 2
± 15
μA
V
PP
≤
V
CC
I
PPR
Current
10
200
μA
V
PP
≥
V
CC
I
PPD
V
PP
Deep Power-Down
Current
1
0.1
5
μA
RP# = GND ± 0.2V
I
PPW
V
Program or Set Lock-Bit
Current
1,7
80
mA
V
PP
= V
PPH1/2
I
PPE
V
Block Erase or Clear
Block Lock-Bits Current
1,7
40
mA
V
PP
= V
PPH1/2
I
PPWS
I
PPES
V
PP
Program Suspend or
Block Erase Suspend
Current
1
10
200
μA
V
PP
= V
PPH1/2
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