參數(shù)資料
型號(hào)： DT28F160S3-100
廠商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述： 2M X 8 FLASH 2.7V PROM, 100 ns, PDSO56
封裝： 16 X 23.70 MM, SSOP-56
文件頁(yè)數(shù)： 20/52頁(yè)
文件大?。?/td> 1262K
代理商： DT28F160S3-100
28F160S3, 28F320S3
E
20
ADVANCE INFORMATION
4.2.3
BLOCK STATUS REGISTER
The Block Status Register indicates whether an
erase operation completed successfully or whether
a given block is locked or can be accessed for flash
program/erase operations.
Block Erase Status (BSR.1) allows system software
to determine the success of the last block erase
operation. BSR.1 can be used just after power-up to
verify that the V
CC
supply was not accidentally
removed during an erase operation. This bit is only
reset by issuing another erase operation to the
block. The Block Status Register is accessed from
word address 02h within each block.
Table 7. Block Status Register
Offset
Length
(bytes)
Description
28F320S3/
28F160S3
x16 Device/Mode
(BA+2)h
(1)
01h
Block Status Register
BA+2:
0000h or
0001h
BSR.0 = Block Lock Status
1 = Locked
0 = Unlocked
BA+2 (bit 0): 0 or 1
BSR.1 = Block Erase Status
1 = Last erase operation did not complete
successfully
0 = Last erase operation completed successfully
BA+2 (bit 1): 0 or 1
BSR 2-7 Reserved for future use
BA+2 (bits 2-7): 0
NOTE:
1. BA = The beginning location of a Block Address (i.e., 008000h is the beginning location of block 1 in word mode.)
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