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參數(shù)資料
| 型號： | DS2045W |
| 廠商： | Maxim Integrated Products, Inc. |
| 英文描述： | 3.3V Single-Piece 1Mb Nonvolatile SRAM |
| 中文描述： | 3.3V、單芯片、1Mb非易失SRAM |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 207K |
| 代理商： | DS2045W |
D
DS2045W 3.3V Single-Piece 1Mb
Nonvolatile SRAM
_____________________________________________________________________
9
Functional Diagram
CURRENT-LIMITING
RESISTOR
BATTERY-CHARGING/SHORTING
PROTECTION CIRCUITRY (UL RECOGNIZED)
REDUNDANT LOGIC
DELAY TIMING
CIRCUITRY
CHARGER
CURRENT-LIMITING
RESISTOR
V
TP
REF
V
SW
REF
GND
ML
CE
OE
WE
RST
CE
REDUNDANT
SERIES FET
SRAM
DQ0–7
V
CC
V
CC
UNINTERRUPTED
POWER SUPPLY
FOR THE SRAM
DS2045W
OE
WE
A0–A16
Detailed Description
The DS2045W is a 1Mb (128kb x 8 bits) fully static, NV
memory similar in function and organization to the
DS1245W NV SRAM, but containing a rechargeable ML
battery. The DS2045W NV SRAM constantly monitors
V
CC
for an out-of-tolerance condition. When such a con-
dition occurs, the lithium energy source is automatically
switched on and write protection is unconditionally
enabled to prevent data corruption. There is no limit to
the number of write cycles that can be executed and no
additional support circuitry is required for microprocessor
interfacing. This device can be used in place of SRAM,
EEPROM, or flash components.
The DS2045W assembly consists of a low-power SRAM,
an ML battery, and an NV controller with a battery charg-
er, integrated on a standard 256-ball, 27mm
2
BGA sub-
strate. Unlike other surface-mount NV memory modules
that require the battery to be removable for soldering,
the internal ML battery can tolerate exposure to con-
vection reflow soldering temperatures allowing this sin-
gle-piece component to be handled with standard BGA
assembly techniques.
The DS2045W also contains a power-supply monitor
output,
RST
, which can be used as a CPU supervisor
for a microprocessor.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| DS2045W-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS2045W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS2045Y | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Single-Piece 1Mb Nonvolatile SRAM |
| DS2045Y-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS2045Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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