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參數(shù)資料
| 型號： | DS2045W |
| 廠商： | Maxim Integrated Products, Inc. |
| 英文描述： | 3.3V Single-Piece 1Mb Nonvolatile SRAM |
| 中文描述： | 3.3V、單芯片、1Mb非易失SRAM |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 207K |
| 代理商： | DS2045W |
Recommended Cleaning Procedures
The DS2045W may be cleaned using aqueous-based
cleaning solutions. No special precautions are needed
when cleaning boards containing a DS2045W module.
Removal of the topside label violates the environmen-
tal integrity of the package and voids the warranty of
the product.
Applications Information
Power-Supply Decoupling
To achieve the best results when using the DS2045W,
decouple the power supply with a 0.1μF capacitor. Use
a high-quality, ceramic surface-mount capacitor if pos-
sible. Surface-mount components minimize lead induc-
tance, which improves performance, while ceramic
capacitors have adequately high frequency response
for decoupling applications.
Using the Open-Drain
RST
Output
The
RST
output is open drain, and therefore requires a
pullup resistor to realize a high logic output level. Pullup
resistor values between 1k
and 10k
are typical.
Battery Charging/Lifetime
The DS2045W charges an ML battery to maximum
capacity in approximately 96 hours of operation when
V
CC
is greater than V
TP
. Once the battery is charged,
its lifetime depends primarily on the V
CC
duty cycle.
The DS2045W can maintain data from a single, initial
charge for up to 3 years. Once recharged, this deep-
discharge cycle can be repeated up to 20 times, pro-
ducing a worst-case service life of 60 years. More
typical duty cycles are of shorter duration, enabling the
DS2045W to be charged hundreds of times, therefore
extending the service life well beyond 60 years.
D
DS2045W 3.3V Single-Piece 1Mb
Nonvolatile SRAM
____________________________________________________________________
11
Note:
All temperatures refer to top side of the package, mea-
sured on the package body surface.
PROFILE FEATURE
Sn-Pb EUTECTIC
ASSEMBLY
Average ramp-up rate
(T
L
to T
P
)
3
°
C/second max
Preheat
- Temperature min (T
Smin
)
- Temperature max (T
Smax
)
- Time (min to max) (ts)
100
°
C
150
°
C
60 to 120 seconds
T
Smax
to T
L
- Ramp-up rate
Time maintained above:
-
Temperature (T
L
)
- Time (t
L
)
183
°
C
60 to 150 seconds
Peak temperature (T
P
)
Time within 5
°
C of actual peak
temperature (T
P
)
Ramp-down rate
Time 25
°
C to peak temperature
225 +0/-5
°
C
10 to 30 seconds
6
°
C/second max
6 minutes max
Recommended Reflow Temperature Profile
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS2045W-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS2045W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS2045Y | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Single-Piece 1Mb Nonvolatile SRAM |
| DS2045Y-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS2045Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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