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參數(shù)資料
| 型號(hào)： | DS1265AB-70 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, DIP36 |
| 封裝： | 0.600 INCH, DIP-36 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | DS1265AB-70 |
DS1265Y/AB
7 of 8
102999
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
9. Each DS1249 has a built-in switch that disconnects the lithium source until VCC is first applied by the
user. The expected tDR is defined as accumulative time in the absence of VCC starting from the time
power is first applied by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0
°C to 70°C. For industrial products (IND), this range is -40°C to
+85
°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on VCC.
12. tWR1 and tDH1 are measured from WE going high.
13. tWR2 and tDH2 are measured from CE going high.
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Output Load: 100 pF + 1TTL Gate
All voltages are referenced to ground
Input Pulse Levels: 0V to 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
DS1265 TTP - SSS - III
Operating Temperature Range
blank: 0
° to 70°
IND: -40
° to +85°C
Access Speed
70:
70 ns
100:
100 ns
Package Type
blank: 36-pin 600-mil DIP
VCC Tolerance
AB:
±5%
Y:
±10%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1270AB | 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| DS1270Y | 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| DS1270Y-100 | 2M X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDMA36 |
| DS1270Y-70 | 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDMA36 |
| DS1270AB-100 | 2M X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDMA36 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1265AB-70+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265AB-70IND | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265AB-70-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1265AB-70IND+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265W | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 8Mb Nonvolatile SRAM |
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