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參數(shù)資料
| 型號(hào)： | DS1270Y-100 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 2M X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDMA36 |
| 封裝： | 0.740 INCH, DIP-36 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 144K |
| 代理商： | DS1270Y-100 |
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102999
FEATURES
5 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full
±10% V
CC operating range (DS1270Y)
Optional
±5% V
CC operating range
(DS1270AB)
Optional industrial temperature range of
-40
°C to +85°C, designated IND
PIN ASSIGNMENT
PIN DESCRIPTION
A0 – A20
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
VCC
- Power (+5V)
GND
- Ground
NC
- No Connect
DESCRIPTION
The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as
2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
DS1270Y/AB
16M Nonvolatile SRAM
www.dalsemi.com
13
1
2
3
4
5
6
7
8
9
10
11
12
14
35
36-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
A18
A14
A7
A6
A5
A4
A3
A2
A0
A1
VCC
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
DQ7
CE
36
34
33
32
31
30
29
28
27
26
25
23
24
A20
A16
A12
NC
DQ0
DQ1
15
16
22
21
DQ6
DQ5
17
18
GND
DQ2
DQ3
DQ4
19
20
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1270Y-70 | 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDMA36 |
| DS1270AB-100 | 2M X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDMA36 |
| DS1270AB-70 | 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDMA36 |
| DS1284Q | 1 TIMER(S), REAL TIME CLOCK, PQCC28 |
| DS12885Q | 1 TIMER(S), REAL TIME CLOCK, PQCC28 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1270Y-100# | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270Y-70 | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270Y-70# | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270Y-70IND | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270Y-70IND# | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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