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參數(shù)資料
| 型號(hào)： | DS1265AB-70 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, DIP36 |
| 封裝： | 0.600 INCH, DIP-36 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | DS1265AB-70 |
DS1265Y/AB
3 of 8
102999
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +7.0V
Operating Temperature
0°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature
-40°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature
260°C for 10 seconds
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
DS1265AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1265Y Power Supply Voltage
VCC
4.5
5.0
5.5
V
Logic 1 Input Voltage
VIH
2.2
VCC
V
Logic 0 Input Voltage
VIL
0
+0.8
V
DC ELECTRICAL
(VCC=5V
±=5% for DS1265AB)
CHARACTERISTICS
(tA: See Note 10) (VCC=5V
±=10% for DS1265Y)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-2.0
+2.0
A
I/O Leakage Current
IIO
-2.0
+2.0
A
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CE =2.2V
ICCS1
1.0
1.5
mA
Standby Current CE =VCC-0.5V
ICCS2
100
250
A
Operating Current
ICCO1
85
mA
Write Protection Voltage (DS1265AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage (DS1265Y)
VTP
4.25
4.37
4.5
V
CAPACITANCE
(tA=25
°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
CIN
10
20
pF
Output Capacitance
CI/O
10
20
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1270AB | 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| DS1270Y | 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| DS1270Y-100 | 2M X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDMA36 |
| DS1270Y-70 | 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDMA36 |
| DS1270AB-100 | 2M X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDMA36 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1265AB-70+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265AB-70IND | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265AB-70-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1265AB-70IND+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1265W | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 8Mb Nonvolatile SRAM |
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