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參數(shù)資料
| 型號： | DS1250YP-70-IND |
| 英文描述： | 4096k Nonvolatile SRAM |
| 中文描述： | 4096k非易失SRAM |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 217K |
| 代理商： | DS1250YP-70-IND |
DS1250Y/AB
3 of 11
PACKAGES
The DS1250 is available in two packages: 32-pin DIP and 34-pin PowerCap Module (PCM). The 32-pin
DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a single
package with a JEDEC-standard 600-mil DIP pinout. The 34-pin PowerCap Module integrates SRAM
memory and nonvolatile control into a module base along with contacts for connection to the lithium
battery in the DS9034PC PowerCap. The PowerCap Module package design allows a DS1250 PCM
device to be surface mounted without subjecting its lithium backup battery to destructive high-
temperature reflow soldering. After a DS1250 PCM module base is reflow soldered, a DS9034PC
PowerCap is snapped on top of the PCM to form a complete Nonvolatile SRAM module. The DS9034PC
is keyed to prevent improper attachment. DS1250 module bases and DS9034PC PowerCaps are ordered
separately and shipped in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.3V to +7.0V
0°C to 70°C, -40°C to +85°C for IND parts
-40°C to +70°C, -40°C to +85°C for IND parts
260°C for 10 seconds
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(t
A
: See Note 10)
PARAMETER
SYMBOL
DS1250AB Power Supply Voltage
V
CC
DS1250Y Power Supply Voltage
V
CC
Logic 1
V
IH
Logic 0
V
IL
MIN
4.75
4.5
2.2
0.0
TYP
5.0
5.0
MAX
5.25
5.5
V
CC
+0.8
UNITS
V
V
V
V
NOTES
DC ELECTRICAL
(V
CC
=5V
±
=
5% for DS1250AB)
CHARACTERISTICS
(t
A
: See Note 10) (V
CC
=5V
±
=
10% for DS1250Y)
PARAMETER
SYMBOL
Input Leakage Current
I
IL
I/O Leakage Current
CE
≥
V
IH
≤
V
CC
I
IO
Output Current @ 2.2V
I
OH
Output Current @ 0.4V
I
OL
Standby Current
CE
=2.2V
I
CCS1
Standby Current
CE
=V
CC
-0.5V
I
CCS2
Operating Current
I
CCO1
Write Protection Voltage (DS1250AB)
V
TP
Write Protection Voltage (DS1250Y)
V
TP
MIN
-1.0
-1.0
-1.0
2.0
TYP
MAX
+1.0
+1.0
UNITS
μ
A
μ
A
mA
mA
mA
mA
mA
V
V
NOTES
5.0
3.0
10.0
5.0
85
4.75
4.5
4.50
4.25
4.62
4.37
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1250AB-70 | 4096k Nonvolatile SRAM |
| DS1250AB | 4096k Nonvolatile SRAM |
| DS1250Y | 4096k Nonvolatile SRAM |
| DS1258W | 3.3V 128k x 16 Nonvolatile |
| DS1258W-100-IND | 3.3V 128k x 16 Nonvolatile |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1250YP-70IND+ | 功能描述:NVRAM 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1251 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:4096k NV SRAM with Phantom Clock |
| DS1251P | 制造商:MAXIM 制造商全稱:Maxim Integrated Products 功能描述:4096K NV SRAM with Phantom Clock |
| DS1251W-120 | 功能描述:IC NVSRAM 4MBIT 120NS 32DIP RoHS:否 類別:集成電路 (IC) >> 時鐘/計(jì)時 - 實(shí)時時鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 類型:時鐘/日歷 特點(diǎn):警報(bào)器，閏年，SRAM 存儲容量:- 時間格式:HH:MM:SS（12/24 小時） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
| DS1251W-120+ | 功能描述:實(shí)時時鐘 4096K NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
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