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參數(shù)資料
| 型號(hào)： | DS1258W-100-IND |
| 英文描述： | 3.3V 128k x 16 Nonvolatile |
| 中文描述： | 3.3 128K的× 16非易失 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | DS1258W-100-IND |
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052902
FEATURES
10-Year Minimum Data Retention in the
Absence of External Power
Data is Automatically Protected During a
Power Loss
Separate Upper Byte and Lower Byte Chip
Select Inputs
Unlimited Write Cycles
Low-Power CMOS
Read and Write Access Times as Fast as
100ns
Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
Optional Industrial Temperature Range of
-40 C to +85 C, Designated IND
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A16
DQ0 - DQ15
CEU
CEL
WE
OE
V
CC
GND
- Address Inputs
- Data In/Data Out
- Chip Enable Upper Byte
- Chip Enable Lower Byte
- Write Enable
- Output Enable
- Power (+3.3V)
- Ground
DESCRIPTION
The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV)
SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy
source and control circuitry, which constantly monitors V
CC
for an out-of-tolerance condition. When such
a condition occurs, the lithium energy source is automatically switched on and write protection is
unconditionally enabled to prevent data corruption. DIP-package DS1258W devices can be used in place
of solutions which build nonvolatile 128k x 16 memory by utilizing a variety of discrete components.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is
required for microprocessor interfacing.
DS1258W
3.3V 128k x 16 Nonvolatile
SRAM
www.maxim-ic.com
1
2
3
4
5
6
7
8
9
10
11
12
V
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
A8
A7
40
39
38
37
36
35
34
33
32
31
30
29
28
CEU
CEL
13
14
15
16
17
18
19
20
40-Pin Encapsulated Package
740mil Extended
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
GND
DQ7
DQ6
DQ5
DQ4
DQ3
A6
A5
A4
27
26
25
DQ1
DQ0
OE
DQ2
A2
A1
A0
A3
23
22
21
24
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1258W-150-IND | 3.3V 128k x 16 Nonvolatile |
| DS1258WP-100-IND | 3.3V 128k x 16 Nonvolatile |
| DS1258WP-150-IND | 3.3V 128k x 16 Nonvolatile |
| DS1267-010 | Dual Digital Potentiometer Chip |
| DS1267-050 | Dual Digital Potentiometer Chip |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1258W-100IND# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪(fǎng)問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258W-150 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪(fǎng)問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258W-150# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪(fǎng)問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258W-150-IND | 制造商:DALLAS 制造商全稱(chēng):Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-100 | 制造商:DALLAS 制造商全稱(chēng):Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
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