
MW4IC915MBR1 MW4IC915GMBR1
6–44
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
–0.5. +15
Vdc
Storage Temperature Range
T
stg
–65 to +175
°
C
Operating Junction Temperature
T
J
175
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
GSM Application
(P
out
= 15 W CW)
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
GSM EDGE Application
(P
out
= 7.5 W CW)
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
CDMA Application
(P
out
= 3.75 W CW)
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
R
θ
JC
1.48
1.59
1.63
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C2 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22–A113
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
TWO–TONE FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DS
= 26 Vdc, P
out
= 15 W PEP, I
DQ1
= 90 mA, I
DQ2
= 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
G
ps
29
31
—
dB
Drain Efficiency
(V
DS
= 26 Vdc, P
out
= 15 W PEP, I
DQ1
= 90 mA, I
DQ2
= 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
η
29
31
—
%
Third Order Intermodulation Distortion
(V
DS
= 26 Vdc, P
out
= 15 W PEP, I
DQ1
= 90 mA, I
DQ2
= 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
IMD3
—
–40
–29
dBc
Input Return Loss
(V
DS
= 26 Vdc, P
out
= 15 W PEP, I
DQ1
= 90 mA, I
DQ2
= 240 mA,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =
960.1 MHz)
IRL
—
–15
–10
dB
(continued)
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.