
MRF1550T1 MRF1550FT1
5–128
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in
12.5 volt mobile FM equipment.
Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 12 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Broadband–Full Power Across the Band: 135–175 MHz
Broadband Demonstration Amplifier Information Available
Upon Request
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
40
Vdc
Gate–Source Voltage
V
GS
±
20
Vdc
Drain Current — Continuous
I
D
12
Adc
Total Device Dissipation @ T
C
= 25
°
C (1)
Derate above 25
°
C
P
D
165
0.50
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
175
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.75
°
C/W
(1) Calculated based on the formula P
D
=
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
SEMICONDUCTOR TECHNICAL DATA
175 MHz, 50 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
!!"
!!"
CASE 1264–08, STYLE 1
TO–272
PLASTIC
MRF1550T1
CASE 1264A–02, STYLE 1
TO–272 STRAIGHT LEAD
PLASTIC
MRF1550FT1
TJ –TC
R
θ
JC
REV 5
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.