| 型號(hào) | 廠商 | 描述 |
| q62702-c2254 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) |
| q62702-c2255 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2256 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2257 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2258 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2259 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drver circuit) |
| q62702-c2263 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2264 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2265 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2266 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2275 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2276 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2278 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
| q62702-c2279 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| q62702-c228 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTORS |
| q62702-c228-p 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTORS |
| q62702-c228-s2 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 620pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| q62702-c228-v10 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTORS |
| q62702-c2297 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| q62702-c2298 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| q62702-c2299 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| q62702-c230 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTORS |
| q62702-c230-p 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTORS |
| q62702-c230-s2 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTORS |
| q62702-c2300 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| q62702-c2415 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| q62702-c2416 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface, driver circuit) |
| q62702-c2417 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2418 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2419 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2445 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit) |
| q62702-c2479 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
| q62702-c2481 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
| q62702-c2486 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
| q62702-c2495 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
| q62702-c2496 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
| q62702-c25 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
| q62702-c2517 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
| q62702-c327 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON PLANAR TRANSISTORS |
| q62702-c362 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTOR |
| q62702-c452 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
| q62702-c619 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| q62702-c620 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| q62702-c621 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| q62702-c623 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| q62702-c624 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| q62702-c625 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| q62702-c626 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| q62702-c627 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| q62702-c628 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |