- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361188 > Q62702-C2496 (SIEMENS AG) Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate PDF資料下載
參數(shù)資料
| 型號： | Q62702-C2496 |
| 廠商： | SIEMENS AG |
| 英文描述： | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
| 中文描述： | npn型/進步黨硅數(shù)字Tansistor陣列（開關電路，逆變器，接口電路，驅(qū)動電路） |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-C2496 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-C25 | NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
| Q62702-C2517 | PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
| Q62702-C327 | PNP SILICON PLANAR TRANSISTORS |
| Q62702-C362 | PNP SILICON TRANSISTOR |
| Q62702-C452 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-C25 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
| Q62702-C2517 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
| Q62702-C252 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTORS |
| Q62702-C2529 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain) |
| Q62702-C2532 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
發(fā)布緊急采購，3分鐘左右您將得到回復。