型號(hào) | 廠商 | 描述 |
q62702-c954 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-f780 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon RF Transistor |
q62702g-39 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
q62702x165 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | MB 32C 32#20 PIN RECP |
q62702x166 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | MB 32C 32#20 PIN RECP |
q62702-c690-v1 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Photoelectric Sensor; Sensor Input Type:Fiber-Optic; Sensor Output:PNP; Switch Terminals:Connector; Leaded Process Compatible:No; Output Type:Transistor; Peak Reflow Compatible (260 C):No; Contact Current Max:150mA |
q62702-d110-v1 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Photoelectric Sensor; Sensor Input Type:Fiber-Optic; Sensor Output:PNP; Switch Terminals:Quick Connect; Leaded Process Compatible:No; Output Type:Transistor; Peak Reflow Compatible (260 C):No; Contact Current Max:150mA |
q62702-d160-v10 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Photoelectric Sensor; Sensor Input Type:Fiber-Optic; Sensor Output:NPN; Switch Terminals:Quick Connect; Leaded Process Compatible:No; Output Type:Transistor; Peak Reflow Compatible (260 C):No; Contact Current Max:150mA |
q62702-d159-v10 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | 50/125 PVC MTRJ-MTRJ 5DUPLEX ASSEM |
q62702-d159-v16 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | 50/125 PVC MTRJ-MTRJ 1DUPLEX ASSEM |
q62702-d159-v6 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | 50/125 PVC MTRJ-ST 1M DUPLEX ASSEM |
q62702-f1590 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | 50/125 PVC MTRJ-ST 5MeDUPLEX ASSEM |
q62702-y79-g 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON PLANAR TRANSISTORS |
q62702-y79-h 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON PLANAR TRANSISTORS |
q62702-y79-j 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON PLANAR TRANSISTORS |
q62702-c361-x1 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTOR |
q62702-g0041 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
q62702-g0042 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
q62702-g0043 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
q62702-g0057 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ヘ-gain block Unconditionally stable) |
q62702-g0058 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 ヘ block LNA / MIX Unconditionally stable) |
q62702g0076 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation) |
q62702g0077 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
q62702g62 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
q62702g63 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
q62702g74 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | GaAs MMIC (Dual mode power amplifier for CDMA /TDMA portable cellular phones) |
q62702-k0047 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NEU: 2fach-Silizium-PIN-Fotodiode in SMT NEW: 2-Chip Silicon PIN Photodiode in SMT |
q62702-m0002 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Transistors |
q62702-m0003 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Transistor |
q62702-p1055 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silver Mica Capacitor; Capacitance:150pF; Capacitance Tolerance: 5%; Series:MIN; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Package/Case:Surface Mount (SMD, SMT); Termination:SMD; Leaded Process Compatible:No RoHS Compliant: No |
q62702-p1057 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Mica Film Capacitor; Capacitance:150pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:300V |
q62702-p1058 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silver Mica Capacitor; Capacitance:240pF; Capacitance Tolerance:+/- 5%; Series:MIN; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Package/Case:Surface Mount (SMD, SMT); Termination:SMD; Leaded Process Compatible:Yes RoHS Compliant: Yes |
q62702-p1103 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Mica Film Capacitor; Capacitance:350pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:300V |
q62702-p1113 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Mica Film Capacitor; Capacitance:68pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:300V |
q62702-p1129 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | CAP MICA 70PF 300V SMD |
q62702-p1136 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silver Mica Capacitor; Capacitance:75pF; Capacitance Tolerance:+/- 5%; Series:MIN; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Package/Case:Surface Mount (SMD, SMT); Termination:SMD; Leaded Process Compatible:Yes RoHS Compliant: Yes |
q62702-p1137 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters |
q62702-p1139 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters |
q62702-p1163 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silver Mica Capacitor; Capacitance:12pF; Capacitance Tolerance:+/- 1%; Series:MIN; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Package/Case:Surface Mount (SMD, SMT); Termination:SMD; Leaded Process Compatible:Yes RoHS Compliant: Yes |
q62702-p1164 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silver Mica Capacitor; Capacitance:18pF; Capacitance Tolerance:+/- 1%; Series:MIN; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Package/Case:Surface Mount (SMD, SMT); Termination:SMD; Leaded Process Compatible:No RoHS Compliant: No |
q62702-q1745 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm |
q62702-c692-v1 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTORS |
q62702-d162-v10 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON PLANAR TRANSISTORS |
q62702-d162-v16 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON PLANAR TRANSISTORS |
q62702-x104 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
q62702-x105 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
q62702-x116 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
q62702-x143 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon PIN Diode (Fast switching In stripline package other lead configurations available) |
q62702-x145 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon PIN Diode (Fast switching Coax package) |
q62702-x146 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | RES NET 10K 5% 1/16W |